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Information × Registration Number 0211U004297, 0108U000325 , R & D reports Title The charge carriers transport and strain-induced effects in doped microcrystals and structures under the influence of external perturbations popup.stage_title Head Druzhinin Anatoliy Oleksandrovych, Registration Date 02-02-2011 Organization Lviv Polytechnic National University popup.description2 The mechanisms of charge carriers transport as well as strain-inducted effects in heavily doped Si and Si1-xGex whiskers and polySi-on -isolator layers were estabished under low temperatures up to 4,2 K, influence of electron irradiation with doza 10МeV and fluence 10 18 сm-2 and magnetic filed intensity up to 14Т. The results obtained were used to foreseen performances of semiconductor materials at design of sensors operating in extrem conditions of exploiring. Product Description popup.authors Бережанський Є. Вуйцик А.М. Гандиш М. Гарасим І.Д. Гвоздик І. Далик Ю. Дружинін А.О. Когут І.Т. КогутЮ.Р. Кутраков О.П. Лях-Кагуй Н.С. Мар ямова І.Й. Нічкало С.І. Островський І.П. Стасюк.Н.М. Ховерко Ю.М. popup.nrat_date 2020-04-02 Close
R & D report
The charge carriers transport and strain-induced effects in doped microcrystals and structures under the influence of external perturbations
Head: Druzhinin Anatoliy Oleksandrovych. The charge carriers transport and strain-induced effects in doped microcrystals and structures under the influence of external perturbations. (popup.stage: ). Lviv Polytechnic National University. № 0211U004297
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Updated: 2026-03-23


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