Registration Number
0211U004297,
0108U000325
, R & D reports
Title
The charge carriers transport and strain-induced effects in doped microcrystals and structures under the influence of external perturbations
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Head
Druzhinin Anatoliy Oleksandrovych,
Registration Date
02-02-2011
Organization
Lviv Polytechnic National University
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The mechanisms of charge carriers transport as well as strain-inducted effects in heavily doped Si and Si1-xGex whiskers and polySi-on -isolator layers were estabished under low temperatures up to 4,2 K, influence of electron irradiation with doza 10МeV and fluence 10 18 сm-2 and magnetic filed intensity up to 14Т. The results obtained were used to foreseen performances of semiconductor materials at design of sensors operating in extrem conditions of exploiring.
Product Description
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Бережанський Є.
Вуйцик А.М.
Гандиш М.
Гарасим І.Д.
Гвоздик І.
Далик Ю.
Дружинін А.О.
Когут І.Т.
КогутЮ.Р.
Кутраков О.П.
Лях-Кагуй Н.С.
Мар ямова І.Й.
Нічкало С.І.
Островський І.П.
Стасюк.Н.М.
Ховерко Ю.М.
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2020-04-02
