1 documents found
Registration Number

0211U004837, 0110U003972 , R & D reports

Title

Development of the technology for the deposition of nanocrystalline silicon carbide films for the production of high- stability temperature sensors on their base

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Head

Lopin Aleksandr Vladimirovich,

Registration Date

24-02-2011

Organization

Institute for Single Crystals National Academy of Sciences of Ukraine

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Studied are the thermophysical conditions on the substrate at the growth of SiC film by direct ion deposition. The design of the plasma ion source for direct ion deposition is improved and optimized. The films are shown to have nonlinear I-V characteristics and electiric breakdown field ~ 10 ^5 V/cm. The temperature dependence of the electrical resistance is approximated by the function R = Ro exp(-T/To).

Product Description

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Козловський Анатолій Анатолійович
Семенов Олександр Володимирович

R & D report
Development of the technology for the deposition of nanocrystalline silicon carbide films for the production of high- stability temperature sensors on their base
Head: Lopin Aleksandr Vladimirovich. Development of the technology for the deposition of nanocrystalline silicon carbide films for the production of high- stability temperature sensors on their base. (popup.stage: ). Institute for Single Crystals National Academy of Sciences of Ukraine. № 0211U004837
1 documents found

Updated: 2025-01-15


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