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Information × Registration Number 0211U004837, 0110U003972 , R & D reports Title Development of the technology for the deposition of nanocrystalline silicon carbide films for the production of high- stability temperature sensors on their base popup.stage_title Head Lopin Aleksandr Vladimirovich, Registration Date 24-02-2011 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 Studied are the thermophysical conditions on the substrate at the growth of SiC film by direct ion deposition. The design of the plasma ion source for direct ion deposition is improved and optimized. The films are shown to have nonlinear I-V characteristics and electiric breakdown field ~ 10 ^5 V/cm. The temperature dependence of the electrical resistance is approximated by the function R = Ro exp(-T/To). Product Description popup.authors Козловський Анатолій Анатолійович Семенов Олександр Володимирович popup.nrat_date 2020-04-02 Close