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Information × Registration Number 0211U004838, 0110U003974 , R & D reports Title Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices popup.stage_title Head Puzikov Vyacheslav Mikhailovich, Registration Date 24-02-2011 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The ion plasma system was modernized. The technological process of the making of test heterostructures of nanostructured SiC/Si was optimized. Developed was the basic structure and technological scheme for the production of parametric mesostructure series of high-voltage SHF pin diodes using protectuve coatings based on nanostructured SiC layers with a thickness of 2 mcm. Product Description popup.authors Лопін Олександр Володимирович Семенов Олександр Володимирович popup.nrat_date 2020-04-02 Close