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Information × Registration Number 0211U004962, 0110U006408 , R & D reports Title Study of the process obtanning silicon high purity by plasma chemical recovering cleaned silane in low-temperature plasma of atomic hydrogen. popup.stage_title Head Shirokov Boris Mikhajlovich, Доктор технічних наук Registration Date 28-03-2011 Organization National Science Center "Kharkiv Institute of Physics & Technology" popup.description2 On the basis of transformer model low nemperature nonequilibrium hydrogen plasma numerical values of conductivity for preset values of pressure, gas temperature and concentration electrons in the charge have been calculated. Numerical value of conductivity of plasma has allowed to define its resistance for the chosen geometrical sizes of the chamber and frequency of an exciting magnetic field. Are received, necessary for working out plasma cemical reactors, dependence on capacity put in plasma, pressure and structure of the gas mix, characterising a zone energy contribution in the induction charge. HF charge with low energy contribution are characterised by linear dependence of gas temperature on capacity put in the charge, that essentially expands a scope of the given charge in plasma cemical experiment. Product Description popup.authors Дериземля Анатолій Миколайович Кришталь Петро Григорович Радченко Володимир Іванович Семенов Микола Олександрович Швець Олег Михайлович Широков Борис Михайлович popup.nrat_date 2020-04-02 Close