Registration Number
0211U005244,
0110U006270
, R & D reports
Title
Research and development of ion-plasms technologies for formation of silicon composites by adding of the self-organization stimulating impurities.
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Head
Evtukh Anatoli Antonovych,
Registration Date
12-03-2011
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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The technology for silicon enriched SiOx films deposition by ion-plasma sputtering of silicon in oxygen has been developed. As a result of physical and electrophysical properties of SiOx and SiO2(Si) films such findings have been determineds: - the opposite direction of the refractive index changing after annealing of SiOx films and their transformation in the nanocomposite film SiO2(Si); - the opposite of the refractive index change after annealing SiOx films and their transformation in the nanocomposite film SiO2 (Si) for small and large initial values of the refractive index; - transformation of SiOx films in nanocomposite SiO2(Si) films by high temperature annealing. At temperatures annealing of 800-1000 ° C phase separation in films of SiOx is not complete, they consist of phases of SiOx, SiO2 and silicon content, which depends on the annealing temperature and the initial index stoichiometry value x. The PL spectra consists two stable components, one of which corresponds to glow of amorphous silicon nanoinclusions, and another - the crystalline Si. Thermal treatment of SiOx films at temperature of 1100°C and above leads to the formation of nanocrystalline silicon inclusions, surrounded by an oxide matrix of SiO2, whose structure is characterized by a mixture of interrelated 4 - and 6 - rings of tetrahedrons SiO4; - the silicon nanocrystals have been found on the surface of nanocomposite SiO2(Si) films and their size and surface density have been determined. After annealing of SiOx films at T = 1000 C and 1050 C Si nanocrystals were formed with sizes d = (2-5) nm (T = 1000 C), d = (4-6) nm (T = 1050 C) and surface density of N = (1,5-2,7) x 1010 cm-2. At the same time the annealing at T = 1100 C leads to increase in size of nanocrystals to d = (5-8) nm and decreasing surface density to N = 3,2x 109 cm-2; - the accumulation of negative charge in nanocomposite films of SiO2(Si) and the dependence of its magnitude from the electric field. - the increase of the silicon enriched SiOx film conductivity with increasing their index of refraction. Increased abundance of silicon in the films leads to increase of their electrical conductivity. - the transformation of the SiOx film into nanocomposite SiO2(Si) film leads to a significant (several orders of magnitude) decrease in their electrical conductivity, which indicates the change of the charge carriers transport mechanism.
Product Description
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Євтух Анатолій Антонович
Кизяк Анатолій Юрійович
Лісовський Ігор Петрович
Литовченко Володимир Григорович
Мельник Віктор Павлович
Оберемок Олександар Степанович
Попов Валентин Георгійович
Романюк Борис Миколайович
Саріков Андрій Вікторович
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2020-04-02
