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Information × Registration Number 0211U005650, 0111U004614 , R & D reports Title Enhancement effects of Raman scattering and light emission by semiconductor nanostructures popup.stage_title Head Vlakh Mykhailo Yakovych, Доктор фізико-математичних наук Registration Date 19-12-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 At the given stage of the project structures with nanostructured layers of the noble metals necessary for realisation of a technique of supersensitive optical diagnostics semiconductor and molecular nanosystems on the basis of strengthening of intensity of their characteristic scattering and emission of light are developed. By a variation of a nominal thickness of a film, from 4 to 20 nm and annealing temperature, from 250 to 450оС, nanoisland ensembles have been obtained of different size and surface density. Measurement of spectral dependences of optical reflection and transsmission of such nanostructures on frequency of a plasmon maximum have allowed to establish absorption from the average nanoisland size. These layers have been used as SERS-substrates for obtaining enhancement of Raman scattering from organic molecular layers and inorganic clusters of CdS, prepared by means of colloidal synthesis. Product Description popup.authors Джаган Володимир Миколайович Юхимчук Володимир Олександрович popup.nrat_date 2020-04-02 Close
R & D report
Head: Vlakh Mykhailo Yakovych. Enhancement effects of Raman scattering and light emission by semiconductor nanostructures. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0211U005650
1 documents found

Updated: 2026-03-26