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Information × Registration Number 0211U005738, 0111U004981 , R & D reports Title Technology and physical properties of graphene and graphene-like structures popup.stage_title Head Striha M.V., Registration Date 23-12-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of studies: graphene and graphene-like structures. The aim of work: finding of new features of graphene physical properties, particularly theoretical studies of modulation effects in graphene and theoretical studies of magnetotransport and high-field transport in graphene. General theory of modulation of the radiation in doped graphene placed on high dielectric permeability substrate was developed. It was find out that modulator for telecommunication near IR-range (~1.5 mkm) can be based on single-layer or multi-layer graphene fixed on dielectric substrate with high dielectric permeability (AlN, Al2O3, HfO2, ZrO2). A theoretical model is developed for intrinsic generation-recombination (g-r) noise in bipolar graphene. On basis of numerical estimates it was demonstrated the potential dominance of g-r noise over the Nyquist and flicker noise that in monolayer grahpene. The obtained results may be important for practical applications in the development of low-noise graphene-based electronics and far-infrared/terahertz optoelectronics. Product Description popup.authors Алєйніков А.Б. Бєляєв О.Є. Васько Ф.Т. Кисельов В.С. Кочелап В.О. Наумов А.В. Райчев О.Е. Сафрюк Н.В. Соколов В.М. popup.nrat_date 2020-04-02 Close