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Information × Registration Number 0211U006020, 0108U001476 , R & D reports Title The obtaining of silicon carbide polytypes films by direct deposition of low-energy ions popup.stage_title Head Semenov Aleksandr Vladimirovich, Registration Date 15-02-2011 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The design of the plasma ion source with planar silicon carbide cathode and nonuniform field on the surface was optimized, its testing and characterization was performed. Studied were the thermophysical conditions on the substrates with gradient heating in the process of the growth of SiC film. The heteroplytype sturucture 3C/21R-SiC were grown. Product Description popup.authors Лопін Олександр Володимирович Пузіков Вячеслав Михайлович popup.nrat_date 2020-04-02 Close