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Information × Registration Number 0211U006264, 0111U000608 , R & D reports Title Effect of the Growth Conditions on Optoelectronic Properties of "|||- Nitrides in Al2O3 Pores" Self-organized nanosystems. popup.stage_title Head Osinsky Vladimir Ivanovich, Registration Date 03-03-2011 Organization State Enterprise "Research Institute of Microdevices" STC "Institute for Single Crystals" of NAS of Ukraine popup.description2 In this project, semiindustrial technology of III-nitrides nanostructures filling Al2O3 pores has been developed. Template layers of anodized Al2O3 on Si substrates has been obtained by anodization in different electrolytes. Such layers have enough level of the hexagonal self-organization of cylindrical nanopores for further groth of GaN and ІnGaN nanostructures. For epitaxial growth of III-nitrides nanostructures MO- and cloride- vapor phase epitaxy methods has been used. Experimental samples of III-nitrides-based optoelectronic nanostructures will be obtained. Their electrophysical and luminescence parameters has been measured. Product Description popup.authors Ляхова Н.М. popup.nrat_date 2020-04-02 Close