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Information × Registration Number 0211U006774, 0106U001392 , R & D reports Title Effect of the space charge at the interlayer interfaces on current transport in GaAs-based planar structures for communications and control elements popup.stage_title Head Pryvalov Ievgen Mykolaiovych, Registration Date 28-03-2011 Organization Institute of Technical Mechanics of NASU and NSAU popup.description2 The study is concerned with thin-film GaAs structures. The study is aimed at dentifying a possibility to measure the capacitance-voltage characteristics of thin-film GaAs structures at moderately small amplitudes of the measuring ac voltage. The investigation method is analytical, numerical and experimental. A numerical model is developed to calculate the apparent capacitance of thin-film GaAs structures. An expression that gives the measured apparent capacitance of a semiconductor structure as a function of the true capacitance and the amplitude of the measuring ac voltage is derived. Using this expression, it is shown that the capacitance-voltage characteristics of thin-film GaAs structures, which feature steeply dropping regions, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the expense of taking measurements at two different amplitudes. This conclusion is confirmed by the results of numerical calculation of the apparent capacitance. The above results are new. The field of application is the production of GaAs-based field-effect transistors. Product Description popup.authors Іванов Володимир Володимирович Вінтман Захар Лейбович Горєв Микола Борисович Джевінський Віталій Павлович Доронін Олексій Володимирович Дробахін Олег Олегович Заболотний Петро Іванович Камков Володимир Петрович Коджеспірова Інна Федорівна Козленко Ельвіра Йосипівна Привалов Євген Миколайович Яцуненко Анатолій Григорович popup.nrat_date 2020-04-02 Close