Registration Number
0211U007147,
0109U007085
, R & D reports
Title
Tecnology of producing dislocation-free large diameter Cz-Si single crystals using heat treatments by engineering of oxygen atoms structural arrangement in crystal lattice: Scientific principles
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Head
Machulin Volodymyr Fedorovych,
Registration Date
29-03-2011
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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The research work is devoted to the development of the scientific principles of the technology of the formation of stable, dislocation and strain free Si material. The project is intended to address the following issues: study of the precipitation dynamics of oxygen as well as the oxygen structural state in Si with different defect concentration and type; establishement of the interrelation between the concentration and type of these microdefects on the one hand and the formation dynamics and the structure of oxygen precipitates on the other hand; establishement of the mechanism of the formation of structural defects in oxygen containing Si during the crystal growth and subsequent anneals; elaboration of the physical model of the precipitation processes of oxygen in the single crystalline Si that takes into account the influence of the concentration and type of microdefects. Multi-stage furnace and beam anneals are applied for the modification of the defect state of crystal. The basic methods of investigation are IR-spectroscopy, high-sensitivity X-ray diffractometry and topography, optical and transmission electron mkicroscopy, determination of the diffusion length and life time of minority charge carriers, computer simulation.
Product Description
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Войтович Марія Володимирівна
Злобін Сергій Олександрович
Кладько Василь Петрович
Лісовський Ігор Петрович
Литовченко Володимир Григорович
Мачулін Володимир Федорович
Саріков Андрій Вікторович
Слободян Микола Васильович
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2020-04-02
