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Information × Registration Number 0211U007378, 0106U006190 , R & D reports Title Investigation of surface phenomena and non-equilibrium processes in layered optoelectronic structures popup.stage_title Head Ptashchenko Aleksandr, Registration Date 20-04-2011 Organization Odessa I.I.Mechnikov's national Universitu popup.description2 Object of the research is the layered structures of optoelectronics. The aim of the work is creation of a base of experimental data on surface phenomena and non-equilibrium processes in layered structures of optoelectronics, as well as establishing mechanisms of surface phenomena and non-equilibrium processes in these structures. Research methods are an analysis of electrical, photoelectrical, photo- and electro-luminescence characteristics of layered structures, as well as radiographic methods. The mechanisms of the influence of ammonia vapors, ethanol and water on electrical and photoelectrical characteristics of GaAs, AlGaAs, GaN, InGaN and sili-con p-n junctions are established. Depending on the band gap of the semiconductor, the surface density of deep centers, partial pressure of the mentioned vapors, as well as the sign and the value of the bias voltage, the gas-sensitivity of p-n junctions is de-termined by an increase in surface recombination rate or formation of surface conductive channel. The regularities of a GaP-InGaP heterojunction formation by laser doping are established. It is shown that such heterojunctions as photovoltaic energy converters have, under certain technological conditions, high short-circuit current and idling voltage. The energy spectra of centers, which are responsible for the degradation of silicon MOS structures under X-ray irradiation, are determined. Results of the work are introduced in the educational process at the Physics Department by improving lectures and special workshops. Forecast assumptions about the object of research is the ability of using of layered semiconductor structures to creation of high sensitive gas sensors and solar cells with high performance parameters. Product Description popup.authors Євтушенко Ніна Германівна Ємець Олена Володимирівна Бобок Іван Ігоревич Богдан Ольга Василівна Довганюк Генадій Віталійович Дойчо Ігор Костянтинович Залюбинська Людмила Миколаївна Мірошниченко Олексій Іванович Манакін Вадим Леонідович Маслєєва Наталя Миколаївна Пастернак Наталя Миколаївна Птащенко Федір Олександрович Солошенко Віктор Іванович Стукалов Сергій Анатолійович Червоненко Святослав Петрович Шугарова Варара Валеріївна popup.nrat_date 2020-04-02 Close