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Information × Registration Number 0211U007993, 0111U006995 , R & D reports Title kinetics of polarization local reversal in the thin films of ferroelectricsemiconductors popup.stage_title Head Morozovska Anna Nikolaevna, Доктор фізико-математичних наук Registration Date 07-12-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The aim of the second stage of the project is to model kinetics of local electromechanical response of the thin films of virtual and normal ferroelectrics and ferroelectrics-semiconductors. As a result of the project we proposed a method of description of kinetics of local electromechanical response of the thin films of virtual ferroelectrics-semiconductors with movable ions and vacancies, normal ferroelectrics and ferroelectrics-semiconductors. This method takes into account the influence of size effects, depolarization field and surface screening of the bound charges. The large variety of static and dynamic hysteresis loops bias-strain in thin films of ferroelectrics-semiconductors are calculated and analyzed. The results were obtained using both linear and nonlinear screening theories. During the project accomplishment the following results were established: (a) the influence of size effects on static and dynamic local electromechanical response of the films of virtual and conventional ferroelectrics-semiconductors, and heterostructures based on them; (b) the effect of bound charge screening phenomena on the local electromechanical response of the films of virtual and conventional ferroelectrics-semiconductors. The results are applied to the self-consistent quantitative analysis of scanning probe microscopy experimental data. Product Description popup.authors Єлісєєв Євген Анатолійович Морозовська Ганна Миколаївна Свєчніков Георгій Сергійович Яковенко Ярослав Володимирович popup.nrat_date 2020-04-02 Close