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Information × Registration Number 0211U008140, 0109U006860 , R & D reports Title Development of experimental methods resistance of thin layers of semiconductor films popup.stage_title Head Rodionov Valeriy Yavgenovich, Registration Date 05-04-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The most important feature films and the entire structure SEMICONDUCTOR FILMS (NPP) is generally electric strength, which is determined by the value Probiina tension field between the electrodes. When increasing the voltage applied to the NNP, the temperature in its dielectric, especially in semiconductor layers, due to increasing losses in the structure and Joule heat generation in a transparent electrode. This in turn increases the probability of dielectric breakdown in which there is further local warming film to its final thermal destruction. Therefore Probiina field intensity depends on many parameters: the material film, its structure, thickness, density, quality of substrate on which the deposited film on the structure of the device and thin film conducting electrode (TSE), which determines the conditions of heat dissipation structure and mode of excitation (pulse duration riznopolyarnyh the frequency of enforcement). Monitoring the defect structure and the film becomes very important for determining excellence correction layers and their deposition process and to issue the initial data for the following operations elektrotrenuvannya and burning bridges that carry between neighboring electrodes Product Description popup.authors Родіонов Валерій Євгенович Шмидко Ігор Миколайович popup.nrat_date 2020-04-02 Close