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Information × Registration Number 0211U008895, 0111U005562 , R & D reports Title Creation and investigation of the physical properties of new semiconductor structures with resonant interaction of plasma and phonon excitations. popup.stage_title Head Strelchuk Viktor Vasylyovych, Доктор фізико-математичних наук Registration Date 28-11-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Scanning confocal Raman spectroscopy was used to nondestructively evaluate the structural and electronic properties of n+/n0/n+-GaN Gunn-diode structures. The depth profiles of the free carrier concentration and mobility were obtained from a line shape analysis of the w-, w+ coupled phonon-plasmon modes. It was found that the intensity profiles of the Raman polar A1(LO) phonon mode depend on the thickness of the undoped n0 layer, while the intensity profiles of the nonpolar E2- high mode were unaffected by the doping. The change in frequency and linewidth of E2-high mode throughout the thickness of the GaN layers, however reveal structural inhomogeneity in the diode structures. The carrier concentration and mobility exhibit only slight variations with thickness with the largest variation being at the free surface of the device. Product Description popup.authors Авраменко Катерина Андріївна Коломис Олександр Федорович Ніколенко Андрій Сергійович popup.nrat_date 2020-04-02 Close