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Information × Registration Number 0211U009800, 0111U002778 , R & D reports Title Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices. popup.stage_title Head Venger Evgeni Fedorovych, Registration Date 27-12-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The report contains information on the preparation technology of the nano-scale films of Ge on GaAs, results of investigation of intrinsic stress, electrical and optical properties, film surface and heteroboundary morphology depending on deposition rate and thickness of the films, as well as results on development and study of Ge/GaAs heterojunction with nano-scale layer made of strongly compensated Ge. Product Description popup.authors Венгер Євген Федорович Кулик Олена Сергіївна Мітін Вадим федорович Мітін Валентин Вадимович Матвеева Людмила Олександрівна Неміш Іван Юрійович Холевчук Володимир Васильович popup.nrat_date 2020-04-02 Close
R & D report
Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices.
Head: Venger Evgeni Fedorovych. Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices.. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0211U009800
1 documents found

Updated: 2026-03-28


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