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Information × Registration Number 0211U009802, 0111U003894 , R & D reports Title Development of methods for production of THz microwave emission sources based on III V semiconductor structures with nanostructure buffer layers and structured diffusion barriers. popup.stage_title Head Sheremet Volodymyr Mykolaiovych, Registration Date 27-12-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 High stable contact systems with nanostructured diffusion barriers to the active elements of sources of microwave irradiation are designed and investigated. The mathematical modelling of active elements with intervalley transfer of charge carriers of n+-n-n+ type structure on the basis of GaN for the sources of microwave irradiation in the range of frequencies 90?110 ГГц is conducted and the base parameters of technical process n+-n - n+ structures of GaN are certain. Barrier height dependences on the level of alloying of semiconductor and temperature in the contact metal - dielectric layer - GaN are theoretically studied for the model of two discrete levels in the bandgap of GaN. The theoretical analysis of contact resistance of metal - dielectric layer - GaN is conducted for the thermoionic and field emission mechanisms taking into account degeneration of semiconductor. Product Description popup.authors А.В.Саченко В.М.Шеремет Кудрик Я.Я. Р.В.Конакова popup.nrat_date 2020-04-02 Close