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Information × Registration Number 0211U009803, 0111U003893 , R & D reports Title Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers popup.stage_title Head Konakova Raisa Vasil'evna, Registration Date 28-12-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Manufacturing scheme of Gunn diode chips with the nanostructured buffer layers on the basis of porous layers of InP and contacts with diffusion barriers on the basis of the nanostructured amorphous layer of ТіВх are developed. Model of close ohmic contact is created and approved. Contact resistance of ohmic contact with insulating layer is calculated. Modes of working capacity of the contact systems with diffusion barriers on the basis of the nanostructured ТіВх layers at the increased temperatures are determinated. In is shown, that maximal initial power of Gunn diodes made on the basis of porous nanostructured InP substrates, at frequencies 90 and 118 GGz, measured at temperatures - 40, +25 and +75 °С, is higher than of the Gunn diodes, made on the basis of standard InP substrates. Product Description popup.authors А.В.Саченко В.В.Мілєнін В.М.Шеремет Р.В.Конакова С.В.Новицький Я.Я.Кудрик popup.nrat_date 2020-04-02 Close