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Information × Registration Number 0211U013109, 0111U001624 , R & D reports Title The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices popup.stage_title Head Shwarts Yuriy Mikhailovich, Registration Date 26-12-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 As a result of the stage N2 of the work, the basic technological regimes for growth of nanofilms of Ge determined: vacuum in the chamber - no worse than 2x10^-6 Tor, the deposition rate of Ge films - 0.1-100 nm/c, the temperature of GaAs substrates - 200-600 ^oC; - 0,1 -100 nm /s, accuracy of measument temperature of the substrate - 5 ^oC, GaAs - semi-insulating sustrates, the thicknesses of Ge films - 2-5000 nm, Ge films are р and n type; crystal structure of the film are policrystall, texture or monokrystall. Product Description popup.authors popup.nrat_date 2020-04-02 Close