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Information × Registration Number 0211U013347, 0111U005976 , R & D reports Title Development and optimization of effective methods of growing and enriching by the isotope of 82Se of ZnSe single crystals and processes of their surface chemical polishing for fabrication of operating elements of low-temperature scintillation bolometers. popup.stage_title Head Tomashik V. M., Доктор хімічних наук Registration Date 23-12-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 ABSTRACT Report of scientific research work: 74 p., 11 tabl., 31 fig., 4 applications, 49 sources. The objects of investigation are technological processes of synthesis and crystal growth of ZnSe and processes of their mechanical and chemical treatment. The purpose of work is to develop technological basis and to create a research production of zinc selenide crystals, which enriched isotope 82Se. Crystals will be used in the scintillation low-temperature bolometer at registration for neutrinoless double beta disintegration and also to develop and optimize etching compositions for chemical-mechanical and chemical-dynamic polishing in the formation of high quality surface of working elements substrates of devices. The methods of research are to grow crystals from the melt; to study mechanisms of dissolution of ZnSe crystals in ethants by the method of rotating disk; to investigate a surface condition after chemical treatment by metallographic and profilometric analysis, by electron microscopy; to research the electrophysical parameters of the material depending on surface treatment (spectra of low-temperature photoluminescence). A laboratory method of zinc selenide synthesis of elementary components Zn та 82Se is elaborated, which provides a receiving ZnSe in powder form with the output of the final product 95% from a mass of the initial components. Improved methods of crystal growth from the melt provided to obtain samples with low-carbon particle inclusions, residual stresses and the boundary of ZnSe crystals. The principles of mechanical and chemical treatment of undoped and doped ZnSe crystals with impurities of tellurium and aluminum, dependence of chemical etching on doping, influence of the etchants and technological parameters of treatment on surface roughness and electrophysical properties are established. According to dependencies " composition of etchant - the etching rate ", results metallographic and profilometric analysis and research data of electrophysical properties of the surface after chemical treatment the etchants compositions H2O2 - HBr - ethylene glycol, that produce bromine are optimized for chemical-dynamic and chemical-mechanical polishing of these materials. The investigation of low-temperature photoluminescence (Т = 5 К) of undoped and doped ZnSe crystals is performed and the corresponding bands in the exciton and impurity regions of the spectrum are identified. The dependence of the intensity and energy position of the photoluminescence bands on the type of doping impurity and method mechanical treatment of ZnSe samples is analyzed. After appropriate treatment and testing crystal samples of Zn82Se will be used as working elements of the low scintillation bolometer, that work at Т= 15-25 К. CRYSTAL GROWTH, SURFACE TREATMENT, LOW TEMPERATURE PHOTOLUMINESCENCE, PROFILOMETRIC ANALYSIS, SYNTHESIS, SCINTILLATION BOLOMETER, CHEMICAL POLISHING, ZINC SELENIDE. Product Description popup.authors Єрмаков В.М. Будзуляк С.І. Вахняк Н.Д. Воронкін Є.Ф. Галкін С.М. Демчина Л.А. Калитчук С.М. Капуш О.А. Корбутяк Д.В. Кравецький М.Ю. Кравцова А.С. Купчак І.М. Лисецька О.К. Литвин О.С. Пащенко Г.А. Рибалка І.А. Стратійчук І.Б. Сукач А.В. Томашик З.Ф. Тріщук Л.І. popup.nrat_date 2020-04-02 Close