Search academic texts

Information × Registration Number 0212U000015, 0109U000702 , R & D reports Title Investigation of rаdiation hardness of layered crystals and development of based on them photoconvertors and lugh-energy radiation sensors. popup.stage_title Head Kovalyuk Zakhar Dmytrovych, Registration Date 04-01-2012 Organization Chernivtsi Department of the I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine popup.description2 GaSe, InSe, and PbI2 single crystals having reproducible and stable characteristics and a homogeneous distribution of impurities were obtained. On their basis photoelectric converters operating over a wide spectral range were developed. We have carried out technological experiments aimed to determine the optimum conditions for the formation of potential barriers on layered semiconductors by using the methods of direct optical contact, thermal treatments in the open air and sulphur vapours. The prepared photoconverters were irradiated with different kinds of radiation: neutrons, electrons, and -rays. A comparative analysis of the obtained results on the influence of the irradiations on their characteristics is done. It is shown that the radiation resistance of the investigated InSe (GaSe)-based photoconverters is much higher than that for silicon-based analogues, what enables to recommend them for operation under conditions of a high radiation background. Testing sensors for high-energy radiations was carried out. Product Description popup.authors Заслонкін А.В. Мінтянський І.В. Нетяга В.В. Савицький П.І. Сидор О.А. Сидор О.М popup.nrat_date 2020-04-02 Close