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Information × Registration Number 0212U000016, 0110U005592 , R & D reports Title Sensors of photoelectric and ionizing radiations based on layered semiconductors: technology of preparation and investigation of characteristics. popup.stage_title Head Kovalyuk Zakhar Dmytrovych, Registration Date 04-01-2012 Organization Chernivtsi Department of the I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine popup.description2 Undoped and doped layered monocrystals InSe, GaSe, In2Se3 та PbI2 are grown and their perfection is confirmed. By means of the methods of Van der Waals contact, thermal oxidation and chemical sputtering the samples of photosensitive barrier structures р-n-InSe, p-GaSe-n-InSe, intrinsic oxide - p-InSe and ІТО-p-GaSe with high parameters are manufactured. The effect of a gamma-bremsstrahlung with an energy 0-34 MeV at doses from10E11 to 10E16 cm-2 on their properties is investigated. A comparison of the parameters to those for ІТО-SiО2-Si and n-p-Si photodiodes is done. Product Description popup.authors Заслонкін А.В. Мінтянський І.В. Нетяга В.В. Савицький П.І. Сидор О.А. Сидор О.М popup.nrat_date 2020-04-02 Close