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Information × Registration Number 0212U000038, 0111U002622 , R & D reports Title The development of plasma nanotechnology of the nanostructured aluminium and boron nitrides layers deposition for microwave devices surface protection popup.stage_title Head Zayats Mykola Sergiyovich, Registration Date 06-01-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 As a result of Phase II of the project the experimental samples of nanostructured BN and AlN layers on silicon and quartz substrates were produced by RF magnetron sputtering (setting "Cathode-1M"). The morphology of the surface and optical properties of films of AlN / n-Si (111) (the reflection spectra in the range 200-750 nm, the reflection spectra in the range of 1,4-25 mm) was studied. The resulting value of the refractive index of the films AlN / n-Si (111) in the wavelength range 505-675 nm was obtained and it was equal to 2.13. The difference in the distribution of minimum reflection band of the films and the crystal in the infrared spectra was explained by the presence of mechanical tensile stresses and by the influence of heavily doped substrate n-Si (111) onto IR reflection films AlN. The optical properties of films of BN / n-Si (100) (reflection and transmission spectra in the range 0, 2-25 microns) were studied. The determined band gap was 4.6 eV, the absorption coefficient was 3,5 10^4 cm -1, and transmission was more than 80%. Determined optical parameters and analysis of the spectra showed that the boron nitride films in general correspond to a hexagonal lattice structure of h-BN. A review of the literature concerning the relevance of the technological developments of receipt, investigation and prospects for practical application nanostruktured films (layers) BN was made. Product Description popup.authors В.Б. Лозінський В.Г. Бойко М.І. Клюй М.С. Заяць popup.nrat_date 2020-04-02 Close