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Information × Registration Number 0212U000172, 0111U001019 , R & D reports Title The theory of carrying of current through a Schottky barrier on the basis of arsenide of indium - arsenide of gallium strained nanoheterosystems with quantum dots popup.stage_title Head Peleshchak Roman Mykhailovych, Доктор фізико-математичних наук Registration Date 20-01-2012 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 In approximation of self-consistent limiting conditions the system of nonlinear differential equations, which describes the carrying of current in Schottky diodes of type metal - InAs/GaAs semiconductor tense heterosystem with the built-in layer of InAs quantum dots taking into account electron-deformation effects, is deduced. Within the framework of the offered model the regularity of spatial distributing of deformation of material of InAs/GaAs nanoheterosystem with InAs quantum dots depending from average concentration of electrons is established. Product Description popup.authors Даньків Олеся Омелянівна Козак Михайло Іванович Крипак Анаталій Олексійович Кузик Олег Васильович Німецький Володимир Петрович Пелещак Роман Михайлович Петрицин Оксана Євгенівна popup.nrat_date 2020-04-02 Close