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Information × Registration Number 0212U000269, 0111U004315 , R & D reports Title "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 2 stage - "Interference exposure of inorganic photoresists using immersion: investigation and optimisation." popup.stage_title Head Indutnyi Ivan, Доктор фізико-математичних наук Registration Date 27-01-2012 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 The optical schemes for photoresist exposure by periodic light field with the necessary spatial frequencies were mounted. Using the results of computer modeling of exposure and after-exposure etching the values for exposure by helium-cadmium (440 nm) and argon (488 nm) lasers were optimized. It is shown that the value of exposure depends on the multiplicity of exposure, spatial frequency of interference pattern and duty ratio of periodic lithographic masks. The method of doubling the frequency of high-frequency relief-phase structure, which has several advantages over existing: easier and therefore cheaper and faster the technological process. The method can be used in the production sub-wavelengths optic structures and optical sensors. Experimental samples of one-dimensional and two-dimensional periodic nanostructures on layers of chalcogenide resist were produced and investigated using AFM microscopy, measuring the effect of polarization conversion, measurement of spectral dependences of diffraction efficiency and registration of diffraction orders intensity in the far field. It is shown that the registration of the intensity distribution of diffraction orders give the possibility to control the size of elements in the process of forming of the two-dimensional diffraction structure. Product Description popup.authors Данько Віктор Андрійович Жовмір Сергій Сергійович Минько Віктор Іванович Михайловська Катерина Василівна Сопінський Микола Вікторович Шепелявий Петро Євгенович popup.nrat_date 2020-04-02 Close