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Information × Registration Number 0212U000445, 0110U006387 , R & D reports Title Development of industrial technology of the production of tandem heterostructures for photovoltaic by the method of gaseous-phase epitaxy from metal-organics and introduction of them in the manufacturing popup.stage_title Head Krukovskiy Semen, Registration Date 13-02-2012 Organization Public Joint-stock Company "Scientific and industrial concern "Nauka" popup.description2 The developed technology of forming sharp heterosides between tunnel diodes and Photocell, forming a tandem heterostructures Ge/GaAs/InGaP. Try a test photoelectric converter with three p-n junctions based on heterostructure p-GaAs//p-InGaP/p-GaAs/n-GaAs/n-InGaP//p-AlInGaP/p-GaInP/n-GaInP/n-AlInP. Investigated the initial stage of formation of germanium nanoclusters in the technology of building n-p transition based on germanium. Tested the technique of controlling electrical properties of epitaxial layers, heterostructures Ge/GaAs/InGaP using the Hall effect in a facility HMS 3000. Conducted measurement of test samples. Developed and tested method of control parameters photoluminescent heterostructure Ge/GaAs/InGaP, which is based on the use of photoluminescent cartographer PHILPS NANOMETRICS. The method of control of the solid solutions that are in heterostructures Ge/GaAs/InGaP using micro x-ray-structural analysis. The investigations of the epitaxial layers AlxGa1-xAs, InxGa1-xP, AlxIn1-xGayP1-y, AlxIn1-xP, members of the heterostructures Ge/GaAs/InGaP. The method of electro-profiling heterostructures Ge/GaAs/InGaP, which is based on the use of electro profiler Accent. Possibility is shown the control of complex doping profiles with a resolution of ~ 0.01 microns. Designed and optimized production technology user heterostructure Ge/GaAs/InGaP as a whole. Product Description popup.authors Айвазян В.Г. Бобженко С.В. Ваків О.В. Губіш І.В. Долголенко О.М. Калашнік С.А. Кость Я.Я. Кравчун А.М. Круковський С.І. Лопатіна Г.М. Лук’янов А.М. Мачуський Є.А. Микитюк Т.В. Михащук Ю.С. Мрихін І.О. Наконешна Є.П. Оболонський В.О. Омельяненко М.Ю. Парфенюк П.В. Пономаренко А.О. Семенченко В.С. Сидорук Ю.К. Снітко А.М. Турєєва О.В. Туровський А.О. popup.nrat_date 2020-04-02 Close
R & D report
Head: Krukovskiy Semen. Development of industrial technology of the production of tandem heterostructures for photovoltaic by the method of gaseous-phase epitaxy from metal-organics and introduction of them in the manufacturing. (popup.stage: ). Public Joint-stock Company "Scientific and industrial concern "Nauka". № 0212U000445
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Updated: 2026-03-21