Registration Number
0212U000458,
0111U007229
, R & D reports
Title
Investigation of effects of hot electrons in the semiconductor heterostructures with quantum wells which lead to appearance of the negative differential conduction in the ultra-high-frequency range.
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Head
Poroshin Volodimir Mikolayovich,
Registration Date
14-02-2012
Organization
Institute of physics NASU
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There is proposed a new type of heterostructures containing quantum wells, that are tunnel-coupled with shortperiod superlattices, which are proposed to obtain nonlinear electron transport and negative differential conductivity based on effects of the real-space-transfer of hot electrons. The results of investigations of electron transport in such structures under lateral (directed in the structures plane) electric field and infrared radiation of hot electrons are presented.There are carried out calculations of structures potential profiles, energy spectra, wave functions. There are presented the results of experimental investigations of temperature dependences of electron mobility in these structures. Also there are presented results of calculations for electron mobility in different size-quantization subbands with taking into account of different scattering mechanisms. Investigation of strong-field electron transport (IVC) and field dependence of electron mobility is described. Presented also are results of investigations of far infrared radiation by hot electrons in structures under the conditions of real-space-transfer of carriers between quantum wells and superlattices. The mechanisms of radiation at different values of heating electric field are discussed.
Product Description
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Більовський Павло Антонович
Вайнберг Віктор Володимирович
Васецький Віктор Михайлович
Винославський Михайло Миколайович
Гуденко Юлія Миколаївна
Коротєєв Вадим Вячеславович
Кочелап В'ячеслав Олександрович
Пилипчук Олександр Сергійович
Порошин Володимир Миколайович
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2020-04-02
