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Information × Registration Number 0212U000802, 0110U006681 , R & D reports Title Sensors of photoelectric and ionizing radiations based on layered semiconductors: optic and microscopic investigations. popup.stage_title Head Zhirko Yurij Ivanovich, Registration Date 03-04-2012 Organization Institute of physics NASU popup.description2 The object of investigations was a semiconductor layered InSe and GaSe crystals, nondoped and doped by impurity atoms of Cd, Zn, Sn, and Ge. Objective: to determine optimal regime of gamma-irradiation of InSe and GaSe crystals for their us as a sensors of ionizing-radiation. Research methods- EDS, SEM and a low-temperature optical investigations. It is shown that the increase of ?-irradiation doze up to 1014?/cm2 for nondoped crystals and their next doping by Zn and Cd impurities lead to decrease of a defects by Frenkel and by Schotky that made them rather promising as a working elements for gamma-irradiation sensors. Product Description popup.authors Жирко Юрій Іванович Скубенко Микола Андрійович popup.nrat_date 2020-04-02 Close