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Information × Registration Number 0212U000941, 0111U007674 , R & D reports Title Quantum Size Effects in semiconducting V2VI3 and IV-VI-based Thin Film and Bulk Structures and Control of their Thermoelectric Properties popup.stage_title Head Rogacheva Elena, Доктор фізико-математичних наук Registration Date 20-06-2012 Organization The Kharkov state polytechnical university popup.description2 The objects of the research are crystals and thin films of V2VI3 and IV-VI compounds of different composition. The goal of the work is a preparation of crystals and thin-films on the basis of V2VI3 and IV-VI semiconductor compounds of different composition, research of micro- and crystalline structure, measuring of mechanical, galvanomagnetic and thermoelectric (TE) properties depending on composition, temperature, heat treatment. The research methods are X-ray diffractometry, optical microscopy, electronic microscopy, measuring of microhardness at a room temperature, measuring of conductivity, Hall coefficient, Seebeck coefficient in the temperature interval 77 - 300 K. The policrystals of semiconductor compounds: Bi2Te3 with different degree deviations from stoichiometry, Sb2Te3, PbTe doping PbI2, PbCl2, Bi2Te3, Sb2Te3; PbSe doping PbCl2 and in plenty Pb, SnTe with different deviation from stoichiometry, GeTe doping V, In and Bi were prepared an ampoules method. Attestation of all samples was conducted: investigation of chemical composition, degree of homogeneity, microstructure, crystalline structure, measuring of microhardness, electrophysical, galvanomagnetic and TE of properties depending on composition, temperature, heat treatment. Influence of V, In, Bi admixtures mechanical, galvanomagnetic and TE properties of GeTe was investigated. The thin films samples of PbSe, PbSe doping 2 mol.% PbCl2 and SnTe compounds with different degree deviation from stoichiometry, with different layers thickness, type and concentration charge carrier, and also dependences of galvanomagnetic and TE properties on temperature, films thickness and kinetic factors were obtained Product Description popup.authors Будник Олександр Валентинович Водоріз Ольга Станіславівна Нащекіна Ольга Миколаївна Ольховська Світлана Іванівна Рогачова Олена Іванівна Сіпатов Олександр Юрійович popup.nrat_date 2020-04-02 Close
R & D report
Head: Rogacheva Elena. Quantum Size Effects in semiconducting V2VI3 and IV-VI-based Thin Film and Bulk Structures and Control of their Thermoelectric Properties. (popup.stage: ). The Kharkov state polytechnical university. № 0212U000941
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Updated: 2026-03-23