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Information × Registration Number 0212U001291, 0110U004655 , R & D reports Title Development and progress of method of submicron topography and passport systems of chemical composition, structural perfection, electrophysics parameters and strain distributing in the nanostructures of electronics and optoelectronics. popup.stage_title Head Strelchuk Viktor Vasylyovych, Доктор фізико-математичних наук Registration Date 31-01-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Apparatus and diagnostic techniques of high-resolution scanning confocal Raman spectroscopy, luminescence and infrared Fourier microspectroscopy and electron diffraction microscopy were developed and improved to study the structural parameters, strain and composition of the nanostructures of electronics and nanoscaled carbon structures with submicron spatial resolution. Single-wall carbon nanotubes were studied with confocal resonance Raman spectroscopy in the range of excitation energies 1.92-3.81 eV. Resonant step-like behavior of combined flexural оТО and оТА vibrational modes was firstly observed. The spatial distribution of dislocation nanoscale defects in p-CdTe in the area of nanoindented points was studied by low-temperature photoluminescence mapping technique. Radiation-stimulated phase transformations in fullerite С60 films under irradiation with Ті+ (Еі=140 keV) ions were studied by micro-Raman spectroscopy. Radiative recombination of nonuniform charge carriers in multilayer InGaN/GaN structures was studied, and gradient asymmetric spatial profiles of strains in depth of the structure were obtained. Confocal Raman spectroscopy was applied to study and analyze the spatial profiles of composition and elastic strains in depth of InAs/Al(Ga)As heterostructure with InAs quantum dots. The coupling of LO-phonons and plasmon vibrations of free charge carriers in GaN diode structures was studied, and spatial profiles of concentration (mobility) of charge carriers were obtained in depth of the structure. Scanning IR spectroscopy was used for spatial mapping of polycrystalline diamond films. Spatial distribution of their structural characteristics, chemical and phase composition was established. Polycrystalline diamond films were studied by microscopic electron diffraction and micro-Raman spectroscopy. Spatial maps of the phase composition and grain orientations were obtained. Product Description popup.authors Авраменко Катерина Андріївна Гонтар Олександр Григорович Коломис Олександр Федорович Куліш Микола Полікарпович Ніколенко Андрій Сергійович Романюк Артем Сергійович popup.nrat_date 2020-04-02 Close