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Information × Registration Number 0212U001389, 0110U006271 , R & D reports Title Development and introduction of formation technology of the unstressed uniform silicon ingot. popup.stage_title Head LItovchenko Vladimir Grygorovych, Registration Date 02-02-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Report on R&D: 13 pages, 3 figures, 2 tables, 8 references. Objects of research - the silicon structure implanted by impurity ions and subjected to gettering and thermal procedures. Purpose - Development and production methods for the characterization of silicon material. Research methods - Raman spectroscopy, X-ray diffraction, mass spectrometry, spectroscopy of the surface photovoltage. We developed a method of diffuse x-ray scattering in single crystals of silicon, which allows to measure the concentration of defects interstitial and vacancy type. We used methods of introducing different types of defects (point and extended) in the silicon wafer, which allowed to confirm the effectiveness of the proposed method of testing defects in the wafers. The investigations of the recombination activity of impurities implanted titanium and iron in silicon were performed and it was shown that gettering of these impurities are effective for wafers in which no oxygen precipitates. It is shown that the use of lasers with different wavelengths in the measurement of Raman spectra allows to determine the magnitude and sign of stress at various depths in the silicon wafers. Using the stimulated formation of point defects the high-intensity irradiation (RTA) allows in controlled manner to influence on the formation of a relaxed phase of SiO2 in the volume of silicon, and the tense (gettering) phase. Product Description popup.authors Євтух Анатолій Антонович Кладько Василь Петрович Лісовський Ігор Петрович Литовченко Володимир Григорович Романюк Борис Миколайович popup.nrat_date 2020-04-02 Close