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Information × Registration Number 0212U001605, 0111U006452 , R & D reports Title Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique popup.stage_title Head Belyaev Alexandr, Доктор фізико-математичних наук Registration Date 14-02-2012 Organization V.Lashkaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 Investigations on multilayered metallization parameters optimization have been carried out. It is necessary to fabricate radiation- and thermo-stable contact systems for nanoelectronic devices based on group III-nitrides. Mechanisms of contact resistance formation have been elucidated in dependence on multilayered metallization composition and technology parameters applied. The investigations were directed to elaboration of technology of manufacturing of radiation- and thermo-stable contacts for microwave devices operated in 150 300 GHz frequency range. Product Description popup.authors Кладько В.П. Конакова Р.В. Кочелап В.О. popup.nrat_date 2020-04-02 Close