Search academic texts

Information × Registration Number 0212U002040, 0109U001332 , R & D reports Title Examination of processes of interaction of radiation with layered structures. Development of physical and mathematical bases of information technologies of examination. popup.stage_title Head Pelykhatiy Mikola Michailovich, Registration Date 16-01-2012 Organization Kharkov National University named after V.N. Karazin popup.description2 Object of study: single crystals of silicon and layered structures based on it; technology interaction studies of ionizing radiation with layered structures, the processes of radiation defect formation and changes in mechanical-electrical properties of materials and structures when they interact with streams of accelerated particles under different conditions. Objective: to obtain new data on mechanisms of radiation defect formation and changes in mechanical-electrical properties of materials and structures as they interact with high-energy particles and to identify the nature of these changes, dependence on the parameters of ionizing radiation, the development of theoretical foundations of the creation and use of advanced technologies integrated study of processes of interaction of ionizing radiation with layered structures. Research methods and equipment: particle accelerators, irradiation of alpha-, gamma-rays, electron diffraction, microscopy (optical, scanning), mechanical spectroscopy, the measurement and control of electrical properties of materials, methods of harmonic analysis, systems analysis methods, methods of physical, mathematical modeling , methods of integrated data processing and information technology. As a result of this research were obtained following main results: - Shows the relevance of systems research processes of radiation defect formation as a result of the analysis of the basic theoretical approaches to the problem of radiation defect formation and the known results of experimental and theoretical studies; - The concept of information technology systems study of processes of radiation defect formation, implementation of which mode ASND create conditions for the development of experimental techniques of system, system models and technologies interconnecting physical and simulation experiments to further investigate the processes of radiation defect formation and changes in mechanical-electrical properties of materials and structures in different conditions; - Investigated the effects that accompany the processes of formation of layered structures, on the basis of the electroscope dielectric layers is shown that the new optical absorption bands decrease in intensity and shift are associated with the structuring of dielectrics, it is shown that in the near-surface strata of the formation of new phases, which cause mechanical stress amorphous and polycrystallinity; - To develop physical and mathematical models of the formation of profiles of secondary particles in metals, semiconductors and insulators; - Developed a mathematical model of radiation defect formation during ion irradiation, based on the calculation of the spectrum of PVA using the cascade-probability function; - Experimental and theoretical study of the effect of ionizing radiation, in particular - and-rays due to internal friction silicon shows that -irradiation to the primary the previous as gamma-irradiation, and volume of silicon is actually internal irradiation by electrons as a result of the photoelectric effect , gamma-irradiation can lead to the formation of lattice defects by direct interaction of photons with atoms of the crystal, the basic process is the ionization of atoms, which generates free electrons; previous gamma-irradiation compared with irradiation strongly increased the maximum level of attenuation, but leads to only a single peak associated with the concentration of E-centers, the energy of gamma-irradiation is that the secondary electrons have an energy insufficient to knock silicon atoms, so the gamma-ray irradiation does not produce A-centers of this type (peaks B and C do not have) in the case irradiation effect on the overall level of attenuation is not as strong, but its effect is still more heterogeneous and more complex dependence of the amplitude suggests dislodging the atoms in the interstices of the base material with high-relatively heavy particles and secondary electrons and the formation of mobile dislocations in the stress field of A-centers type. The results can be used in further investigation of the processes of radiation defect formation and changes in mechanical-electrical properties of materials and structures under different conditions, the development of an automated system of scientific research processes of radiation defect formation in semiconductor materials and creating products based on them with the desired properties. The results obtained are new and provide an objective basis for further experimental and theoretical studies of the processes of radiation defect formation, the influence of ionizing irradiation on the properties of materials and formation of structures in different conditions, technology development systems research processes of radiation defect formation. Product Description popup.authors Гернет Н. Пеліхатий М. Пунько Ю. Савчук Л. Сухова Т. Чуєнко О. popup.nrat_date 2020-04-02 Close