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Information × Registration Number 0212U002107, 0110U005698 , R & D reports Title Physical processes of radiation detection in teraherz/submilimeter range by field-effect transistors popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 21-03-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The properties of the terahertz/sub-millimeter (THz) detectors based on Si-MOSFET (silicon field effect transistors) was studied in the 54 - 145 GHz spectral range. Gate - source, drain - source characteristics, and voltaic sensitivity of the Si-MOSFET was measured at 293 K and 77 K temperatures. Si-MOSFET THz detector's equivalent circuit for electrical matching with external registration system was presented. Decreasing of the Si-MOSFET THz detector 's working temperature is initiate sensitivity increase. The spectral dependencies characteristics is depended not only frequency but polarization and direction of incident irradiation. Product Description popup.authors Сизов Федір Федорович popup.nrat_date 2020-04-02 Close