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Information × Registration Number 0212U002202, 0109U000079 , R & D reports Title Influence of ultrasound on convective flow for Si single crystal growth with dopant component striations decrease popup.stage_title Head Kozhemyakin Gennadiy Nikolaevich, Registration Date 30-01-2012 Organization EAST-UKRAINIAN VOLODIMIR DAL NATIONAL UNIVERSITY popup.description2 Investigation object is the growth process Si single crystals by Czochralski method with dopant component striations decrease. The work goal was in elaboration of mathematics and physics model of ultrasound influence on convection stabilization in Si melt, Calculation ultrasound parameters, convective flow, coefficients of ultrasound absorption in high temperature materials using for the waveguide, working out of the crystal growth conditions of Si single crystals at influence of ultrasound on the melt. Science novelty of the results is ultrasound influence model on the decrease of convection in the melt under growing crystal, which base on standing waves formation. The absorption in the waveguides at the temperature near Si melt was studied. The growth conditions of Si single crystals with diameter 150 mm with dopant component striations decrease were found. Product Description popup.authors Дегтярьова Анна Олександрівна Луцький Денис Валерьович Немець Людмила Вікторівна popup.nrat_date 2020-04-02 Close