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Information × Registration Number 0212U002295, 0107U005723 , R & D reports Title Investigation of physical processes in semiconductor materials and detector structures under nuclear irradiation popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 06-02-2012 Organization Scientific Center "Institute for Nuclear Research" of National Academy of Sciences of Ukraine popup.description2 Experimental and theoretical studies of the effect of nuclear irradiation on the electrophysical properties and defect formation processes in the atomic and binary semiconductor materials and heterostructures were carried out. The mechanisms of the increasing of radiation hardness of Si crystals, irradiated by fast reactor neutrons, were investigated and explained based on the introduction of the effective deformation center of direct (Ge) and indirect (oxygen, argon, dislocation loops) annihilation for the vacancies and interstitial atoms. Іt was shown that among the samples of n-type silicon, grown by different methods (FZ, Ar, NTD), the neutron-doped silicon (NTD), grown by the floating-zone method in an argon atmosphere, has the increased radiation hardness to the irradiation by fast neutrons. It was established that the presence of high concentration of oxygen prevents the release of interstitials to the surface of samples and promotes the formation of di-interstitial defects. The structure of deep levels that appear in light-emitting diodes GaP under neutron irradiation was studied. The radiation-stimulated improvement in the current-voltage characteristic GaP LEDs was found at low neutron fluences (Ф<1Е14 neutrons/cm2). A generalized analysis of the impact of ionizing radiation on the optical properties of GaP monocrystals doped by Te was carried out. It was established that the InAs<Sn> crystals with the dopant concentration of ~(3-5)Е18 сm-3 have the radiation hardness, close to maximal value, and can be used as the material for the creating of a radiation-hardened magnetic sensors. Based on the theory of medium magnetoresistance with superconducting inclusions it was suggested a theoretical explanation of the experimentally measured abrupt increase in resistance at a certain magnetic field in samples of InAs, irradiated by alpha particles with energy of 80 MeV at 200 oC. The possibility of determining of the coordinate of narrow beam of fast neutrons, using a polyethylene film as a converter of neutrons and a silicon strip-detector for the registration of the recoil protons, was shown. It was found that in irradiated samples of semimagnetic semiconductors (heterostructures of a type of cadmium-manganese-tellurium) a significant increase in the splitting of exciton levels in a magnetic field in the quantum well take place due to increasing the role of exchange interaction of excitons with magnetic manganese ions, which penetrate in the quantum well layer under irradiation. Product Description popup.authors Анохін Ігор Євгенович Барабаш Людмила Іванівна Бердниченко Світлана Василівна Бондар Микола Микитович Варенцов Михайло Дмитрович Васильківський Анатолій Степанович Верцимаха Ганна Віталіївна Воробйов Володимир Герасимович Гайдар Галина Петрівна Долголенко Олександр Петрович Дубовий Володимир Костянтинович Зінець Олег Сергійович Кібкало Тетяна Іванівна Ластовецький Володимир Францевич Лев Сергій Богданович Литовченко Петро Григорович Пінковська Мирослава Богданівна Полівцев Леонід Андрійович Сугаков Володимир Йосипович Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close