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Information × Registration Number 0212U002691, 0109U000535 , R & D reports Title Inertia phenomena in devices with the intervalley electrons transfer and their influence on the power and frequency characteristics of Gunn diodes on the basis of nitride semiconductors A3B5 during work in two cavity resonator popup.stage_title Head Arkusha U, Registration Date 26-01-2012 Organization Kharkov National University named after V.N. Karazin popup.description2 The objekt of research is a transport of electrons in Gunn diodes on the basis variband semiconductors of Inx(z) Ga1 - x(z) N, Inx(z) Al1 - x(z) N and Gax(z) Al1 - x(z) N in biharmonic resonator. A purpose of work is research of physical processes in the devices of mm-range on the basis variband semiconductors of Inx(z) Ga1 - x(z) N, Inx(z) Al1 - x(z) N and Gax(z) Al1 - x(z) N at the action of electric-field with the first and second harmonics. A research method is numeral experiments by three-temperature models of variband semiconductor devices with intervalley transfer of electrons (ITE). Basic results and their novelty : 1.It is set that the inertance of variband devices is determined by the maximum inertance of semiconductor which enter in the complement of device. In AlN - InN and GaN - InN devices inertance is determined by InN, and AlN - GaN - by GaN. The degree of inertance grows among AlN - GaN, AlN - InN and GaN - InN. 2.The use of biharmonic resonator and difficult cathode contact leads in the insignificant increase of efficiency of generation on a basic harmonic. The increase of efficiency is 3?7%. 3.The best output characteristics have devices on the basis of AlN - InN and GaN - InN. Devices on the basis of AlN - InN have most efficiency of generation, and on the basis of GaN - InN is optimal frequencies. 4.The variband devices on the basis AlN - GaN, AlN - InN and GaN - InN devices during the generation of the second harmonic can effectively work on the effect of intervalley transfer of electrons to frequencies 1- 2 ТGz. On materials of fundamental researches 5 scientific articles in scientific journal are publish, 4 scientific lectures on international conferences are make ( 1 article and 1 lecture with a student). Materials of researches in an educational process on the chair of physical and biomedical electronics and complex information technologies of the V.N.Karazin Kharkov national university were used. The recommendations on drawing on the results of work. The dynamic propertys of variband semiconductor in the strong electric fields have their especiality which distinguish them from other semiconductors of А3В5. The results of research work can be use for development of technology for devices of submm-range. технология GUNN DIOD, NITRIDE SEMICONDUCTORS, VARIBAND SEMICONDUC-TOR, FREQUENCY LIMIT, SUBMM-RANGE, INERTANCE, BIHARMONIC MODE, THREE-TEMPERATURE MODEL. Product Description popup.authors Головко Л. Стороженко І Ярошенко О. popup.nrat_date 2020-04-02 Close