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Information × Registration Number 0212U002692, 0109U000556 , R & D reports Title Rezonance - tunnel and avalanche phenomenas in A3B5 nanoscale and microscopic semiconductor structures popup.stage_title Head Prokhorov Edyard, Registration Date 26-01-2012 Organization Kharkov National University named after V.N. Karazin popup.description2 A research object are nitride based structures, structures with the intervalley transfer of electrons (ITE), tunneling and impact ionization. The aim of this research is to investigate of physical processes in new semiconductor devices operating on tunneling, resonance tunneling, transit and avalanche and avalanche effects by simulation techniques with the purpose of increase of oscillation efficiency and expansion of frequency possibilities of these devices. A research method is a mathematical simulation of physical processes in semiconductor structures with ITE and impact ionization, nanoscale structures on the basis of double and triple A3B5 semiconductors compounds, nitride using Monte - Carlo method. Actuality of researches is relating to the necessity of creation of new semiconductor devices for operating in short-wave part of millimetre and submillimetre wave band. A novelty of work - fundamental researches оn creation of new solid-state active elements for the high frequency power and noise power generation for millimetre and submillimetre wave band on the basis of GaAs and nitrides are never carry out before. The research result and recommendation will be applied in industry of new solid-state devices of microelectronic and nanoelectronics. Prediction in relation to development of research object are a search of new solid-state active elements on the basis of ITE, tunneling, avalanche effects for a generation and amplification of electromagnetic millimetre and submillimetre wave band oscillations. Basic fundamental results: 1. The velocity - field characteristics of two - dimension nitride basis structures are got in the temperature range by the method of Monte Carlo and frequency properties of them are determined. 2. The oscilation efficiencies of transfer electron nitride diodes with different contacts in the frequencies range are obtained and possibility of electromagnetic milimeter and submillimetre wave band oscillation ( 600 - 1000 Hz) is demonstrated. 3. The frequency tranform factor (FTF) for nitride based ( GaN, AlN,InN) diodes are obtained and FTF incrising due to impact ionization is demonstrated. 4. The diodes with lateral tunnel borders are offered. Possibility of terraherts wave band oscillation generation by these diodes is showed . 5. The spectral characteristics of diodes on the basis of GaAs with a static cathode domain by using Monte Carlo methode are derive. Possibility of high-efficiency high frequency noise oscillator creation is demonstrated experimentally . Keywords: velocity-field dependence, Gunn diode, frequency range, ocsillator, impuct ionization, noise diode. Product Description popup.authors Боцула О Дядченко А Клименко О. Плотникова О. popup.nrat_date 2020-04-02 Close