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Information × Registration Number 0212U002903, 0109U004982 , R & D reports Title Ultra fast transistors based on avalanche impact ionization and interband tunneling popup.stage_title Head Sizov F.F., Registration Date 28-02-2012 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Developed model allows to find characteristics inherent to TFETs various design in different operation regimes. The expressions for the tunneling current have been derived both in the conventional uniform-field approximation and taking into account the field nonuniformity in the tunneling area. At low values of the effective gate voltage, the area of the abrupt change of the drain current with the TFET low swing and high transconductance has been obtained. The boundaries of this area have been found, and the cause of its occurrence has been explained. The technological route of fabrication of MCT field effect transistor prototype with p-n- junction between source and drain was improved. Its detectivity at T=77K and radiation frequency 77-78 GHz was studied. Product Description popup.authors Sizov F.F. popup.nrat_date 2020-04-02 Close