Registration Number
0212U004039,
0109U000220
, R & D reports
Title
Optical, surface and tunnelling effects in the metal nanostructures
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Head
Pogosov Valentin Valterovich,
Registration Date
17-01-2012
Organization
Zaporizhzhia National Technical University
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A object of the research is low-dimensional metal systems and the surface of a semi-infinite metal covered with a dielectric layer. A purpose is to study the energy, kinetic and optical properties of confined metal systems. Frequency and size dependences of the absorption coefficient for composites with Al and Cu nanoparticles are computed. Maxwell equations are solved for a metal film of nanometer thickness in the optical frequency range. Calculations of reflection and absorption coefficients are performed for nanometer films inhomogeneous in thickness. Heating of an electronic subsystem metal cluster is investigated within the limits of two-temperature model. The dependence of effective electronic temperature from an external bias voltage is estimated with use dimensional dependence of Debye temperature. The simple scheme of electronic heating which allows to calculate successfully dimensional dependence of temperature of an electronic subsystem of a granule is offered. A method of calculation the broadening levels in granules-disks of three-electrode tunnel structure within the limits of formalism scattering S-matrix is developed. The dependence of the broadening levels from geometrical parameters of a structure is calculated. The theory of single-electronic tunnelling is modified. Model the single-electronic transistor considers the broadening levels and electron heating of granules. Spatial electron distribution and effective potential, electron work function and surface energy of metal slabs and spherical clusters are investigated within the limits of the self-consistent Kohn-Sham theory and models of stable jellium. Size dependences of energy spectrum and the Fermy energy are expected for 2D films and 0D sphere. It is shown that the effect of a dielectric covering on one of parties of plate results to "drawing out" a tail of effective potential for metal surface in this side and to reduction of effective potential with increase of mean value of a dielectric covering constant on the left and on the right of metal. It is set that size dependences of electron work function and surface energy oscillate; the dielectric covering on the metal surfaces diminishes the electron work function.
Product Description
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Бабіч А.В.
Булатецька Т.В.
Вакула П.В.
Коротун А.В.
Курбацький В.П.
Погосов В.В.
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2020-04-02
