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Information × Registration Number 0212U004151, 0109U002574 , R & D reports Title Nearfield microwave tomography of near-surface areas of semiconductor materials and structures popup.stage_title Head Gordiyenko Yuriy O., Registration Date 30-01-2012 Organization Kharkiv National University of Radioelectronics popup.description2 In the framework of research themes defined in the specification - obtained a number of practical results: 1. Developed physical models of electrical parameters of semiconductor exposure to microwave resonance properties - Sensor 2. Developed physical models of mutual influence of local inhomogeneities during microwave - Diagnostic 3. Experiments on the model of the microwave microscope electrophysical parameters of semiconductor and verified the adequacy of the developed models. 4. Built criterion optimization of scanning parameters (step size, the air gap between the tip and the surface, the number of repeated measurements at each point) on the basis of solving the direct problem and information about the noise. 5. An algorithm for microwave tomography scanning unit of local defects (definition and depth of the effective diameter, as well as electrical parameters of the integral) 6. An algorithm for reconstruction of the layered semiconductor parameters by scanning at different altitudes. 7. Preliminary experimental studies of objects with non-uniform distribution of the parameters. 8. Designed and optimized tomography technique of semiconductor samples. Analysis of the results of preliminary experimental studies of semiconductor objects with nonuniform distribution of the parameters indicates the efficiency of the developed methods and highly competitive in comparison with analogues. Product Description popup.authors Бондаренко Ігор Миколайович Гуртовий Михайло Юрійович Жижирій Андрій Сергійович Мельник Сергій Іванович Проказа Олександр Юрійович Сергєєв Павло Юрійович Фролов Евген Юрєвич Чхотуа Марк Сулхан Шевченко Сергій Васильович Шиян Оксана Павлівна popup.nrat_date 2020-04-02 Close