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Information × Registration Number 0212U004229, 0110U001381 , R & D reports Title The investigation of effect of mechanical, magnetic and ionizing radiation fields on the properties of wide band-gap semiconductor crystals and surface-barrier structures popup.stage_title Head Pavlyk Bogdan, Registration Date 31-01-2012 Organization Ivan Franko National University of Lviv popup.description2 Experimentally was determined, that under irradiation doses which are lower than 390 Gy the rearrangement of structural defects, in which are included dislocations, takes place in Si crystals. It was shown that the action of magnetic field causes effects of rearrangements of structural damages on boundary metal-semiconductor. We developed methods of plastic flow of huge Si crystals by uniaxial press at elevated temperatures. Experimentally was determined, that different density of dislocations on surface of p-Si crystals leads to the differences between electro-physical characteristics of surface-barrier structures, which are made on the base of these crystals. We suggested physical model of interaction process of structural and radiation defects in Si single-crystals. We proposed methodology of calculation, which combine electro-physical (direct branch of current-voltage curve) and constructive parameters of p-n - junction, which can be used as a temperature - sensing element. The transistor which was chosen provides maximal temperature range (213,...,523) К and maximum sensitivity of temperature - sensing element. That gives an improvement of metrological characteristics of digital thermometer series TP compared with best world analogs. Product Description popup.authors Грипа Андрій Сергійович Дідик Роман Іванович Кушлик Маркіян Олегович Лис Роман Мирославович Павлик Богдан Васильович Слободзян Дмитро Петрович Шикоряк Йосип Андрійович popup.nrat_date 2020-04-02 Close