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Information × Registration Number 0212U004291, 0109U000380 , R & D reports Title Investigation of physical mechanisms of nanoscale atomic cluster formation under the influence of stresses. popup.stage_title Head Nadtochij Viktor Oleksijovich, Registration Date 03-02-2012 Organization Slovyansk State Pedagogical University popup.description2 The object of research are semiconductor crystals of germanium, silicon and gallium arsenide. 3. The aim of the research was: identifying the physical mechanism of the effect of growth and deformation of point defects on the nucleation and the dislocation distribution in the surface layers of the single-crystal germanium under the influence of low-temperature deformation, using the capabilities of optical and electronical microscopy; analyzing the mechanism of failure of a single crystal of germanium at low temperatures, which is observed in unaxial compression with simultaneous ultrasonic irradiation; proposing a new method of formation of nanoscale semiconductor structures, using the phenomenon of diffusive mass transfer on the surface,according to the presence of a gradient of mechanical stresses. Basic scientific results: there was validated reasonable physical mechanisms of structural changes in the surface layers of semiconductors under the influence of external factors; there was propounded a new method for creating nano-sized island structures on the surface of germanium by special methods of crystal's deformation at low temperatures; there was analyzed the mechanism of failure of covalent crystals at low temperatures. The distinctive features and advantages of the results are determined by the content of applications for the invention: 1. The method of determining the measure of defectiveness of the surface layers of single crystals of Ge and Si. 2.The method of forming nanostructures on the surface of germanium. The practical value of the researching resultes is that they broad the understanding of physical phenomena that occur the place near the surface of diamond crystals (Ge, Si, GaAs) under cyclic deformation at low temperatures and a diffraction-modulated by the intensity of laser irradiation. The methods ,proposed by the authors, can allow the creating of unique objects in the physical properties of clusters and nanostructures, which are output in nanotechnology electronic devices: lasers, resonant tunnel diodes, transistors with two-dimensional electron gas, photodetectors, etc. The results of the research also can be used in the manufacturing of advanced technology semiconductor devices. Product Description popup.authors Надточій Віктор Олексійович Нечволод Микола Кузьмич popup.nrat_date 2020-04-02 Close