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Information × Registration Number 0212U004371, 0111U010547 , R & D reports Title Technoligies of formation of modern semiconductor SiC, AlN films for microelectronics and optoelectronics popup.stage_title Head Perekrestov Vyacheslav, Registration Date 09-02-2012 Organization Sumy State University popup.description2 A research object is processes of gelation of Si, SiC and AlN condensates in the conditions of display of the field selectivity and approaching to the thermodynamics equilibrium. The aim of project is research and development new technological methods of forming of Si, SiC and AlN condensates , based on the phenomena of selforganization of near-equilibrium stationary processes on the interface low temperature plasma-condensate. On the first stage of implementation of project selforganization of different structural-morphological properties of Si surface, as display of the field selectivity is realized. It was set at research of element composition of condensates, that forming of the high-textured tapes of polytype 3С-SiC possibly in the conditions of ionic sputtering in the high-clean inert environment of difficult graphite and silicon target. For the forming of 3С-SiC is certain such technological parameters, as temperature of substarte, pressure of working gas, geometrical parameters of difficult target and optimal distance a target-substarte. The most near to stoichiometrical composition condensstes of the system AlN can be obtain at the use story system plasma - condensate and to running fall-over of steams of liquid to nitrogen, pressure of which was supported at the level of 9 Pa. It is thus set that during the increase of condensate there is a transition from amorphous to the crystalline state as a hexagonal lattice of wurtzite. Product Description popup.authors Дьошин Борис Вікторович Дьошин Віктор Борисович Корнющенко Ганна Сергіївна Космінська Юлія Олександрівна Латишев Віталій Михайлович Мокренко Олександр Анатолійович Перекрестов Вячеслав Іванович popup.nrat_date 2020-04-02 Close