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Information × Registration Number 0212U004490, 0107U009533 , R & D reports Title Transport phenomena in АІІВVI semiconductors popup.stage_title Head Malyk Orest Petrovych, Registration Date 14-02-2012 Organization Lviv Polytechnic National University popup.description2 On the base of short-range principle the charge carrier scattering models on different types of defects in АІІВVI semiconductors are developed. The method of a precise solution of the stationary Boltzmann equation was used for the calculation of the conductivity tensor components. The temperature dependence of the charge carriers mobility in CdxHg1-xTe ((0<x<1), CdxHg1-xSe (0<x<0.547), в ZnxCd1-xTe (0<x<1), ZnxHg1-xSe (0.02< x1), ZnxHg1-xTe (x=0.15) and GaN crystals was calculated. The influence of the different scattering mechanisms on the charge carrier mobility is considered. A good agreement between theory and experiment in all investigated temperature range is established. The scattering parameters for different scattering modes are determined. Product Description popup.authors Малик Орест Петрович popup.nrat_date 2020-04-02 Close