Search academic texts

Information × Registration Number 0212U004773, 0111U006528 , R & D reports Title GRID technology for realization of nondestructive diagnostics of physical parameters in semiconductors structures and nano micro and optoelectronic devices popup.stage_title Head Belyaev Aleksandr Evgenevich, Доктор фізико-математичних наук Registration Date 25-01-2012 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 It was developed a method of nondestructive diagnostics of prifiles of an electron concentration and mobility along growth of the n+/n0/n+-GaN diod structures by using an analysis of the coupled phohon-plasmon modes (CPPMs). CPPMs were modulated using a self-consistent procedure for fitting of the experimental spectra of the scanning confocal Raman spectroscopy that includes both the electro-optic and deformation-potential as well as charge-density fluctuation mechanism as the main processes for light scattering. These calculations were realized on the grid-site of ISP NAS of Ukraine (grid.semicond.kiev.ua). This allows to find a space distributions of the concentration and mobility of free carriers along growth of the n+/n0/n+-GaN diod structures and to carry out functional design of the electro-optical ultrafast Gann diodes. Product Description popup.authors Брикса В.П. popup.nrat_date 2020-04-02 Close