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Information × Registration Number 0212U004899, 0111U003021 , R & D reports Title Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices popup.stage_title Head Puzikov Vyacheslav Mikhailovich, Registration Date 07-02-2012 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The I-V parameters of the mesostructures of high-voltage SHF silicon pin-diodes with 200 mcm thickness of i-region and protected surface are investigated at 20-200 degrees Celsius. For the first time it is shown that protection of the mesostructure surface of SHF pin diode by means of 1-2 mcm thick nanostructured silicon carbide layer provides sufficient stability of the I-V parameters after 50-hour testing under the conditions of elevated humidity (95+-3)% and temperature (60+-3) degrees Celsius at thermocycling. Product Description popup.authors Лопін Олександр Володимирович Семенов Олександр Володимирович popup.nrat_date 2020-04-02 Close
R & D report
Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices
Head: Puzikov Vyacheslav Mikhailovich. Development of technology for the obtaining of protective high-resistance silicon carbide layers for raising reliability of solid powerful super-high frequency devices. (popup.stage: ). Institute for Single Crystals National Academy of Sciences of Ukraine. № 0212U004899
1 documents found

Updated: 2026-03-25


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