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Information × Registration Number 0212U005686, 0112U004115 , R & D reports Title "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 3 stage - "Development and investigation of interference lithography of semiconductor wafers." popup.stage_title Head Indutnyi Ivan, Доктор фізико-математичних наук Registration Date 08-01-2013 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 The kinetics of photo-stimulated positive wet etching of vacuum chalcogenide photoresists have been investigated in dependence on the temperature of annealing, the intensity and spectral composition of the radiation. The optimal regimes of the new process of interference photoetching of annealed chalcogenide layers were established and patent of Ukraine was obtained. Using a patented process of interference photolithography (including the use of immersion) the samples of relief-phase gratings and lithographic masks with spatial frequencies in the range of 900 - 4400 mm-1 were produced. The technological process for fabrication of gratings and bigratings with elements of micron and submicron size on the surface of Si <100> using resistive Ge25Se75-Cr mask and alkaline anisotropic etchants was optimized. The surface patterns of obtained structures were examined with atomic force microscope, and the spectral and angular distribution of the diffraction efficiency were studied also. Product Description popup.authors Данько Віктор Андрійович Жовмір Сергій Сергійович Луканюк Марія Василівна Минько Віктор Іванович Михайловська Катерина Василівна Сопінський Микола Вікторович Шепелявий Петро Євгенович popup.nrat_date 2020-04-02 Close