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Information × Registration Number 0212U005689, 0111U005976 , R & D reports Title Development and optimization of effective methods of growing and enriching by the isotope of 82Se of ZnSe single crystals and processes of their surface chemical polishing for fabrication of operating elements of low-temperature scintillation bolometers. popup.stage_title Head Tomashik V. M., Доктор хімічних наук Registration Date 08-01-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 ABSTRACT Report of scientific research work: 63 p., 3 tabl., 28 fig., 4 applications, 50 sources. The objects of investigation are technological processes of zinc selenide crystals annealing and the processes of their chemical treatment, undoped and doped crystals of ZnSe. The purpose of work is development of methodology of Zn82Se crystals annealing in in a controlled gaseous medium to reduce the level residual thermoelastic stresses, to form a necessary structure of point defects, which determine the scintillation properties of crystals; to make the experimental samples of Zn82Se crystals, to develop and optimize the etchant compositions for the operation of chemical-mechanical and chemical dynamic polishing of undoped and doped ZnSe crystals. The methods of research are a patent search, the annealing in controlled gaseous medium; the study of crystals etching regularities by the method of rotating disk; the surface state research after different stages of mechanical and chemical treatment by the methods of metallographic and profilometric analysis, electron and atomic force microscopy; the study of spectra of low-temperature photoluminescence; test. A laboratory method of ZnSе annealing in the controlled gaseous medium for reducing residual thermoelastic stresses and forming necessary structure of point defects that determine the scintillation characteristics. The optimal conditions of heat treatment bolometer of ZnSе bolometers (Т=1273 К during 50-60 h) were defined, that provide reducing residual internal stresses, increasing boundary strength and fracture toughness, and also contributing to the increase the optical transmission of crystals. The regularities chemical etching undoped and tellurium and aluminum doped of ZnSe crystals, the impact of etchant compositions, alloying of materials and technological processing parameters on surface roughness and its properties were found. According to dependencies " composition of etchant - the etching rate ", results state research and physical properties of surface after chemical treatment were developed the bromine emerging etching compositions H2O2 - HBr - oxalic acid (ethylene glycol) for the chemical-dynamic and chemical mechanical polishing of these materials and modes of these operations. The spectra of low temperature(Т=5 К) photoluminescence (PL) of crystals were studied, corresponding bands in the exciton and impurity regions of the spectrum were identified, the dependence of the intensity and the energy position of band photoluminescence from type doping impurity and method of mechanical and chemical treatment of these materials was analyzed. ZINC SELENIDE, TEMPERATURE TREATMENT, ANNEALING, CRYSTAL SURFACE, CHEMICAL POLISHING, LOW TEMPERATURE PHOTOLUMINESCENCE, SCINTILLATION BOLOMETERS. Product Description popup.authors Єрмаков В.М. Будзуляк С.І. Вахняк Н.Д. Воронкін Є.Ф. Галкін С.М. Демчина Л.А. Калитчук С.М. Капуш О.А. Корбутяк Д.В. Кравецький М.Ю. Кравцова А.С. Купчак І.М. Лисецька О.К. Пащенко Г.А. Рибалка І.А. Стратійчук І.Б. Сукач А.В. Томашик З.Ф. Тріщук Л.І. Ю.В. Крюченко popup.nrat_date 2020-04-02 Close